%0 Journal Article
%4 sid.inpe.br/mtc-m21c/2018/08.06.16.20
%2 sid.inpe.br/mtc-m21c/2018/08.06.16.20.01
%@doi 10.3390/ma11071120
%@issn 1996-1944
%T A novel method of synthesizing graphene for electronic device applications
%D 2018
%8 June
%9 journal article
%A Galvão, Nierlly,
%A Vasconcelos, Getúlio,
%A Pessoa, Rodrigo,
%A Machado, João Paulo Barros,
%A Guerino, Marciel,
%A Fraga, Mariana,
%A Rodrigues, Bruno,
%A Camus, Julien,
%A Djouadi, Abdou,
%A Maciel, Homero,
%@affiliation Instituto Tecnologico de Aeronáutica (ITA)
%@affiliation Instituto de Estudos Avançados (IEAv)
%@affiliation Instituto Tecnologico de Aeronáutica (ITA)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Tecnologico de Aeronáutica (ITA)
%@affiliation Universidade Brasil
%@affiliation Instituto Tecnologico de Aeronáutica (ITA)
%@affiliation Université de Nantes
%@affiliation Université de Nantes
%@affiliation Instituto Tecnologico de Aeronáutica (ITA)
%@electronicmailaddress nierlly@gmail.com
%@electronicmailaddress getulio@ieav.cta.br
%@electronicmailaddress rspessoa@ita.br
%@electronicmailaddress machadopaulo@gmail.com
%@electronicmailaddress marcielguerino@yahoo.com.br
%@electronicmailaddress mafraga07@hotmail.com
%@electronicmailaddress bruno.manzolli@gmail.com
%@electronicmailaddress julien.camus@cnrs-imn.fr
%@electronicmailaddress abdou.djouadi@cnrs-imn.fr
%@electronicmailaddress homero@ita.br
%B Materials
%V 11
%N 7
%P e1120
%K graphene synthesis, silicon carbide, thin film, high-power impulse magnetron sputtering, thermal decomposition, electronic devices.
%X This article reports a novel and efficient method to synthesize graphene using a thermal decomposition process. In this method, silicon carbide (SiC) thin films grown on Si(100) wafers with an AlN buffer layer were used as substrates. CO2 laser beam heating, without vacuum or controlled atmosphere, was applied for SiC thermal decomposition. The physical, chemical, morphological, and electrical properties of the laser-produced graphene were investigated for different laser energy densities. The results demonstrate that graphene was produced in the form of small islands with quality, density, and properties depending on the applied laser energy density. Furthermore, the produced graphene exhibited a sheet resistance characteristic similar to graphene grown on mono-crystalline SiC wafers, which indicates its potential for electronic device applications.
%@language en
%3 galvao_novel.pdf